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AM5430N Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 30-V (D-S) MOSFET | |||
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Analog Power
AM5430N
N-Channel 30-V (D-S) MOSFET
Key Features:
⢠Low rDS(on) trench technology
⢠Low thermal impedance
⢠Fast switching speed
⢠Small Footprint DFN3x2-8L package
Typical Applications:
⢠Portable Computing Power Conversion
⢠Portable Entertainment and GPS Power
Conversion
VDS (V)
30
PRODUCT SUMMARY
rDS(on) (mâ¦)
22 @ VGS = 10V
30 @ VGS = 4.5V
ID(A)
10
8.5
DFN3x2-8L EP
DD
D
D
G
S
SS
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
10
7.5
IDM
30
IS
4.4
Power Dissipation a
TA=25°C
TA=70°C
PD
3.5
2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol
RθJA
Maximum
35
81
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM5430N
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