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AM50P06-15D Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 60-V (D-S) MOSFET
Analog Power
P-Channel 60-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
AM50P06-15D
VDS (V)
-60
PRODUCT SUMMARY
rDS(on) (mΩ)
17 @ VGS = -10V
23 @ VGS = -4.5V
ID(A)
-44
-38
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
±20
Continuous Drain Current
Pulsed Drain Current b
TC=25°C
ID
IDM
-44
-150
Continuous Source Current (Diode Conduction)
IS
-48
Power Dissipation
TC=25°C
PD
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
3
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal
characteristics
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM50P06-15D_1A