|
AM4N60I Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 600-V (D-S) MOSFET | |||
|
Analog Power
N-Channel 600-V (D-S) MOSFET
Key Features:
⢠Low rDS(on) trench technology
⢠Low thermal impedance
⢠Fast switching speed
Typical Applications:
⢠Power Supplies
⢠Motor Drives
⢠Consumer Electronics
AM4N60I
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
600
2 @ VGS = 10V
ID (A)
4
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
600
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Pulsed Diode Forward Current b
Power Dissipation a
VGS
±20
TC=25°C
ID
4
IDM
16
IS
4
ISM
16
TC=25°C
PD
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
3
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM4N60I_1A
|
▷ |