AM4992N Datasheet, PDF (1/3 Pages) Analog Power – Dual N-Channel 100-V (D-S) MOSFET

Analog Power
AM4992N
Dual N-Channel 100-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
100
430 @ V_GS = 10V
480 @ V_GS = 4.5V
I_D (A)
1.8
1.7
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25^oC
TA=70^oC
ID
100
V
±20
1.8
1.4
A
IDM
±7
I_S
1.3
A
TA=25^oC
TA=70^oC
PD
2.1
W
1.3
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case^a
Maximum Junction-to-Ambient^a
t <= 5 sec
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJC
R_θJA
Maximum
40
60
Units
o_C/W
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM4992_A