AM4970N Datasheet, PDF (1/5 Pages) Analog Power – Dual N-Channel 200-V (D-S) MOSFET

Analog Power
AM4970N
Dual N-Channel 200-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• PoE PSE and PD Circuits
• LED Inverter Circuits
• 48V-Input DC/DC Conversion Circuits
VDS (V)
200
PRODUCT SUMMARY
r_DS(on) (mΩ)
300 @ V_GS = 10V
340 @ V_GS = 4.5V
ID (A)
2.2
2.1
SO-8
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
200
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
T_A=25°C
T_A=70°C
I_D
2.2
1.7
I_DM
30
I_S
2.9
Power Dissipation ^a
T_A=25°C
T_A=70°C
P_D
2.1
1.3
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
R_θJA
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM4970N_1A