AM4934N Datasheet, PDF (1/3 Pages) Analog Power – Dual N-Channel 30-V (D-S) MOSFET

Analog Power
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
AM4934N
PRODUCT SUMMARY
FET#
r_DS(on) m(Ω)
1
19 @ V_GS = 4.5V
15 @ V_GS = 10V
2
23 @ V_GS = 4.5V
15 @ V_GS = 10V
I_D (A)
8.4
9.5
7.7
9.5
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol FET#1 FET#1
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
I_D
Pulsed Drain Current^b
I_DM
Continuous Source Current (Diode Conduction)^a
I_S
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
30
30
20
20
9.5
9.5
7.7
7.7
40
40
4.5
4.5
2.1
2.1
1.3
1.3
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady-State
Symbol
R_θJA
Maximum
62.5
110
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM4934_A