AM4926N Datasheet, PDF (1/2 Pages) Analog Power – Dual N-Channel 20-V (D-S) MOSFET

Analog Power
AM4926N
Dual N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
20
58 @ V_GS = 4.5V
82 @ V_GS = 2.5V
system, and telephones power system.
1
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
2
• Miniature SO-8 Surface Mount Package
Saves Board Space
3
• High power and current handling capability
• Low side high current DC-DC Converter
4
applications
I_D (A)
5.0
4.2
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
20
V
± 12
5.0
4.1
A
± 30
Continuous Source Current (Diode Conduction)^a
I_S
1.7
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
2.1
W
1.3
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R_θJA
Maximum
62.5
80
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
May, 2005 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM4926_B