AM4919P Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET

Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
AM4919P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
21 @ V_GS = -4.5V
-20
35 @ V_GS = -2.5V
57 @ V_GS = -1.8V
I_D (A)
8.2
6.4
5.0
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
-20
V
±12
8.2
6.5
A
±30
Continuous Source Current (Diode Conduction)^a
I_S
-2.3
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
2.1
W
1.3
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady-State
Symbol
R_θJA
Maximum
62.5
110
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
November, 2003 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM4919_F