AM4915P Datasheet, PDF (1/5 Pages) Analog Power – Dual P-Channel 30-V (D-S) MOSFET

Analog Power
AM4915P
Dual P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Extended VGS range (±25) for battery pack
applications
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
-30
17.5 @ V_GS = -10V
23 @ V_GS = -4.5V
1
2
3
4
I_D (A)
-9.5
-8.5
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
-30
V
±25
-9.5
-8.2
A
I_DM
±50
I_S
-2.1
A
T_A=25^oC
T_A=70^oC
P_D
2.0
W
1.3
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case^a
Maximum Junction-to-Ambient^a
t <= 5 sec
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJC
R_θJA
Maximum
40
78
Units
o_C/W
o_C/W
September, 2002 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM4915_E