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AM4562C Datasheet, PDF (1/7 Pages) Analog Power – N & P-Channel 60-V (D-S) MOSFET
Analog Power
AM4562C
N & P-Channel 60-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• DC/DC Conversion Circuits
• Motor Drives
VDS (V)
60
-60
PRODUCT SUMMARY
rDS(on) (mΩ)
27 @ VGS = 10V
33 @ VGS = 4.5V
40 @ VGS = -10V
50 @ VGS = -4.5V
ID (A)
7.2
6.5
5.9
5.3
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
Drain-Source Voltage
VDS
60
-60
Gate-Source Voltage
VGS
±20
±20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
IDM
IS
7.5
-4.2
5.9
-3.3
20
-20
2.8
-2.5
Power Dissipation a
TA=25°C
TA=70°C
PD
2.1
1.3
2.1
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM4562C_1A