AM4540C Datasheet, PDF (1/3 Pages) Analog Power – P & N-Channel 40-V (D-S) MOSFET

Analog Power
AM4540C
P & N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
40
104 @ V_GS = 4.5V
89 @ V_GS = 10V
-40
106 @ V_GS = -4.5V
69 @ V_GS = -10V
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
1
• Miniature SO-8 Surface Mount Package
Saves Board Space
2
• High power and current handling capability
3
• Low side high current DC-DC Converter
applications
4
I_D (A)
3.7
4.0
-3.7
-4.6
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
40
-40
V
20
-20
4.0
-4.6
3.3
-3.7
A
±50
±50
Continuous Source Current (Diode Conduction)^a
I_S
2.3
-2.1
A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
2.1
2.1
W
1.3
1.3
Operating Junction and Storage Temperature Range T_J, T_stg
-55 to 150
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady-State
Symbol
R_θJA
Maximum
62.5
110
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
August, 2005 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM4540_B