AM4502CE Datasheet, PDF (1/8 Pages) Analog Power – P & N-Channel 30-V (D-S) MOSFET

Analog Power
AM4502CE
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
S₁
G₁
S₂
ESD Protected ^G2
2000V
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
20 @ V_GS = 4.5V
16 @ V_GS = 10V
-30
33 @ V_GS = -4.5V
23 @ V_GS = -10V
SOIC-8
Top View
1
8
2
7
3
6
4
5
D₁
D₁
D₁
G₁
D₂
D₂
S₁
N-Channel MOSFET
I_D (A)
8.4
10.0
-6.8
-8.5
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
-30
V
V_GS
20
-25
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
I_D
10
-8.5
8.1
-6.8
A
Pulsed Drain Current^b
I_DM
±50
±50
Continuous Source Current (Diode Conduction)^a
I_S
2.3
-2.1
A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
2.1
2.1
W
1.3
1.3
Operating Junction and Storage Temperature Range T_J, T_stg
-55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJA
Maximum
62.5
110
Units
o_C/W
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM4502CE_A