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AM4398N Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 150-V (D-S) MOSFET | |||
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Analog Power
N-Channel 150-V (D-S) MOSFET
Key Features:
⢠Low rDS(on) trench technology
⢠Low thermal impedance
⢠Fast switching speed
Typical Applications:
⢠PoE PSE and PD Circuits
⢠LED Inverter Circuits
⢠48V-Input DC/DC Conversion Circuits
AM4398N
VDS (V)
150
PRODUCT SUMMARY
rDS(on) (mΩ)
89 @ VGS = 10V
99 @ VGS = 5.5V
ID (A)
4.9
4.6
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
±20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
4.9
4.1
IDM
20
IS
4.5
Power Dissipation a
TA=25°C
TA=70°C
PD
3.1
2.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
40
80
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM4398N_1B
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