AM4390N Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 150V (D-S) MOSFET

Analog Power
AM4390N
N-Channel 150V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
150 ^{0.625 @ VGS = 10 V}
0.900 @ V_GS = 4.5V
I_D (A)
1.9
1.6
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC ^ID
I_DM
150
V
±20
5.2
A
±20
Continuous Source Current (Diode Conduction)^a
I_S
1.6
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC ^PD
3.1
W
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJA
Maximum
40
80
Units
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM4390_C