AM4300N Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 150-V (D-S) MOSFET

Analog Power
N-Channel 150-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• PoE PSE and PD Circuits
• LED Inverter Circuits
• 48V-Input DC/DC Conversion Circuits
AM4300N
VDS (V)
150
PRODUCT SUMMARY
r_DS(on) (mΩ)
65 @ V_GS = 10V
75 @ V_GS = 5.5V
ID (A)
5.7
5.3
SO-8
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
150
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
T_A=25°C
T_A=70°C
I_D
5.7
4.8
I_DM
30
I_S
4.1
Power Dissipation ^a
T_A=25°C
T_A=70°C
P_D
3.1
2.2
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
R_θJA
40
80
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM4300N_1A