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AM40N10-30I Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 100-V (D-S) MOSFET
Analog Power
N-Channel 100-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
AM40N10-30I
VDS (V)
100
PRODUCT SUMMARY
rDS(on) (mΩ)
36 @ VGS = 10V
42 @ VGS = 4.5V
ID (A)
31
29
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
VGS
TC=25°C
ID
IDM
TC=25°C
IS
TC=25°C
PD
±20
31.0
80
40
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient c
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
3
Units
°C/W
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1
Publication Order Number:
DS_AM40N10-30I_1A