AM3998N Datasheet, PDF (1/3 Pages) Analog Power – Dual N-Channel Logical Level MOSFET

Analog Power
AM3998N
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
20
0.058 @ V_GS = 4.5 V
0.082 @ V_GS = 2.5V
I_D (A)
3.7
3.1
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
V_GS
±12
T_A=25^oC
T_A=70^oC
I_D
3.7
2.9
I_DM
8
I_S
1.05
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
1.15
0.7
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R_thJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Typ
Max
93
110
o_C/W
130
150
Publication Order Number:
DS-AM3998_D