AM3962NE Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 60-V (D-S) MOSFET

Analog Power
AM3962NE
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
60
0.153 @ V_GS = 10V
0.185 @ V_GS = 4.5V
TSOP-6
D₁
Top View
I_D (A)
2.3
2.1
D₂
cellular and cordless telephones.
G₁
G₂
G1
16
D1
•
Low r_DS(on) provides higher efficiency and _S2
extends battery life
• Low thermal impedance copper leadframe ^G2
TSOP-6 saves board space
25
34
• Fast switching speed
•
High performance trench technology
ESD Protected
2000V
S1
D2
S₁
S₂
N-Channel N-Channel
MOSFET MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit Units
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
I_D
Pulsed Drain Current^b
I_DM
Continuous Source Current (Diode Conduction)^a
I_S
60
V
±20
2.3
1.9
A
8
1.05
A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
1.15
W
0.7
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady-State
Symbol
R_θJA
Maximum
100
166
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM3962NE_A