AM3962N Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 60-V (D-S) MOSFET

Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r_DS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are DC-DC
converters, power management in portable
and battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) Provides Higher Efficiency
• and Extends Battery Life
• Miniature TSOP-6 Surface Mount Package
Saves Board Space
AM3962N
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
60
0.153 @ V_GS = 10V
0.185 @ V_GS = 4.5V
I_D (A)
2.3
2.1
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
60
V
±20
2.3
1.9
A
8
Continuous Source Current (Diode Conduction)^a
I_S
1.05
A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
1.15
W
0.7
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady-State
Symbol
R_θJA
Maximum
100
166
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
May, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3962_A