AM3933P Datasheet, PDF (1/3 Pages) Analog Power – P-Channel 30-V (D-S) MOSFET

Analog Power
AM3933P
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
G1
S2
• Miniature TSOP-6 Surface Mount Package
G2
Saves Board Space
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
-26.5 ^{0.130 @ VGS = -4.5V}
0.190 @ V_GS = -2.5V
I_D (A)
-2.5
-1.9
TSOP-6
Top View
1 6 D1
2 5 S1
3 4 D2
S₁
G₁
S₂
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
-26.5
V
±12
-2.5
-1.9
A
I_DM
-10
I_S
±1.6
A
T_A=25^oC
T_A=70^oC
P_D
1.15
W
0.7
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typ
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
R_thJA
93
130
Max
110
150
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
May, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3933_B