AM3902N Datasheet, PDF (1/5 Pages) Analog Power – Dual N-Channel Logic Level MOSFET

Analog Power
AM3902N
Dual N-Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
25
4.0 @ V_GS = 4.5 V
5.1 @ V_GS = 2.5V
•
Low r_DS(on) provides higher efficiency and
extends battery life
1
• Low thermal impedance copper leadframe
TSOP-6 saves board space
2
• Fast switching speed
• High performance trench technology
3
I_D (A)
0.4
0.2
6
5
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
25
V
-8.5
0.22
0.17
A
I_DM
0.5
I_S
±0.3 ^A
T_A=25^oC
T_A=70^oC
P_D
0.9
W
0.7
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol Maximum Units
R_{ΤΗ JA}
140
o_C/W
180
PRELIMINARY
1
Publication Order Number:
DS-AM3902_B