AM3850C Datasheet, PDF (1/7 Pages) Analog Power – N & P-Channel 25-V (D-S) MOSFET

Analog Power
N & P-Channel 25-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r_DS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are DC-DC
converters, power management in portable
and battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) Provides Higher Efficiency
• and Extends Battery Life
• Miniature TSOP-6 Surface Mount Package
Saves Board Space
V_DS (V)
25
-25
AM3850C
r_DS(on) (Ω)
ted _{0.45 @ VGS = 4.5V}
Ra _{0.72 @ VGS = 2.5V}
-V 1.09 @ VGS = -4.5V
2.5 ^{1.50 @ V}GS ^{= -2.5V}
I_D (A)
1.2
1.0
-0.85
-0.75
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
25
-25
V
8
-8
1.2
-0.9
0.95
-0.65 ^A
±3.5
±2.5
Continuous Source Current (Diode Conduction)^a
I_S
1
-1
A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
Operating Junction and Storage Temperature Range T_J, T_stg
1.25
W
0.8
-55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Symbol Maximum Units
R_{T HJA}
100
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3850_A