AM3836N Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 30-V (D-S) MOSFET With Schottky Diode

Analog Power
AM3836N
N-Channel 30-V (D-S) MOSFET With Schottky Diode
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
63 @ V_GS = 4.5V
110 @ V_GS = 2.5V
I_D (A)
3.5
3.0
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
I_F (A)
•
Low r_DS(on) provides higher efficiency and
extends battery life
30
0.48V @ 1.0A
1.0
TSOP-6
Top View
D
K
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
A1
S2
G3
6K
G
5 N/C
S
A
4D
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Units
Drain-Source Voltage (MOSFET)
V_DS
30
Reverse Voltage (Schottky)
V_KA
30
V
Gate-Source Voltage (MOSFET)
V_GS
±12
Continuous Drain Current (T_J=150^oC) (MOSFET)^a
T_A=25^oC
T_A=70^oC
I_D
± 3.5
± 2.8
Pulsed Drain Current (MOSFET)^b
Continuous Source Current (MOSFET Diode Conduction)^a
I_DM
± 16
A
I_S
1.25
Average Forward Current (Schottky)
I_F
0.5
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)^a
Maximum Power Dissipation (Schottky)^a
Operating Junction and Storage Temperature Range
I_FM
8
T_A=25^oC
T_A=70^oC
P_D
T_A=25^oC
1.3
0.8
W
1.0
T_A=70^oC
0.6
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
t <= 10 sec
Steady-State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJA
Maximum
100
166
Units
o_C/W
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM3836_A