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| AM3808NE Datasheet, PDF (1/5 Pages) Analog Power – Dual N-Channel 20-V (D-S) MOSFET | |||
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Analog Power
AM3808NE
Dual N-Channel 20-V (D-S) MOSFET
Key Features:
⢠Low rDS(on) trench technology
⢠Low thermal impedance
⢠Fast switching speed
Typical Applications:
⢠Battery Powered Instruments
⢠Portable Computing
⢠Mobile Phones
⢠GPS Units and Media Players
VDS (V)
20
PRODUCT SUMMARY
rDS(on) (mΩ)
20 @ VGS = 4.5V
28 @ VGS = 2.5V
ID(A)
6
5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=100°C
ID
6
3.6
IDM
22
IS
1
Power Dissipation a
TA=25°C
TA=100°C
PD
0.83
0.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol
RθJA
Maximum
110
150
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM3808NE_1A
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