AM3524C Datasheet, PDF (1/3 Pages) Analog Power – N & P-Channel 20-V (D-S) MOSFET

Analog Power
AM3524C
N & P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
20
-20
r_DS(on) (Ω)
0.047 @ V_GS = 4.5V
0.055 @ V_GS = 2.5V
0.079 @ V_GS = -4.5V
0.110 @ V_GS = -2.5V
TSOP-6
Top View
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
D₁
G₁
S₁
N-Channel MOSFET
I_D (A)
4.1
3.8
-3.2
-2.7
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
-20
V
V_GS
±8
±8
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
I_D
4.1
-3.2
3.3
-2.6
A
Pulsed Drain Current^b
I_DM
8
-8
Continuous Source Current (Diode Conduction)^a
I_S
1.05
-1.05
A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
1.15
W
0.7
Operating Junction and Storage Temperature Range T_J, T_stg
-55 to 150
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R_thJA
N-Channel
Typ
Max
93
110
130
150
P-Channel
Typ
Max
93
110
130
150
Unit
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM3524_A