AM3460N Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 60V (D-S) MOSFET

Analog Power
AM3460N
N-Channel 60V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, cellular
and cordless telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
60
0.027 @ V_GS = 10 V
0.033 @ V_GS = 4.5V
I_D (A)
7.1
6.4
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
VGS
TA=25^oC
TA=70^oC
I_D
60
V
±20
7.1
5.8
A
I_DM
±15
I_S
1.7
A
TA=25^oC
TA=70^oC
P_D
2.0
W
1.3
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol Maximum Units
R_{T HJA}
62.5
o_C/W
110
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM3460_A