AM3457PE Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 30-V (D-S) MOSFET

Analog Power
AM3457PE
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
PRODUCT SUMMARY
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
V_DS (V)
-30.0
r_DS(on) (Ω)
0.056 @ V_GS = -10V
0.083 @ V_GS = -4.5V
I_D (A)
-4.0
-3.4
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
1
6
• Low thermal impedance copper leadframe
TSOP-6 saves board space
2
5
• Fast switching speed
• High performance trench technology
ESD
3
4
Protected
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
VGS
TA=25^oC
TA=70^oC
I_D
-30
V
±20
-4.0
-3.2
A
IDM
±20
I_S
-1.7
A
TA=25^oC
TA=70^oC
P_D
2.0
W
1.3
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady state
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_{T HJA}
Maximum Units
62.5
o_C/W
110
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM3457PE_A