AM3456NE Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 30V (D-S) MOSFET

Analog Power
AM3456NE
N-Channel 30V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.032 @ V_GS = 10 V
0.044 @ V_GS = 4.5V
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) provides higher efficiency and
1
extends battery life
2
• Low thermal impedance copper leadframe
TSOP-6 saves board space
3
• Fast switching speed
• High performance trench technology ESD Protected
2000V
I_D (A)
5.3
4.5
6
5
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
30
V
±20
5.5
4.4
A
I_DM
±20
I_S
1.3
A
T_A=25^oC
T_A=70^oC
P_D
2.0
W
1.3
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R_{T HJA}
Maximum Units
85
62.5
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM3456NE_A