AM3456N Datasheet, PDF (1/2 Pages) Analog Power – N-Channel 30V (D-S) MOSFET

Analog Power
AM3456N
N-Channel 30V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low r_DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Low Gate Charge
• Fast Switch
• Miniature TSOP-6 Surface Mount Package
Saves Board Space
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.044 @ V_GS = 10 V
0.064 @ V_GS = 4.5V
I_D (A)
5.1
4.5
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
30
V
±20
5.5
4.4
A
I_DM
±20
I_S
1.3
A
T_A=25^oC
T_A=70^oC
P_D
2.0
W
1.3
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R_{T HJA}
Maximum Units
85
62.5
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
November, 2003 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM3456_B