AM3445P Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET

Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
AM3445P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.038 @ V_GS = -4.5V
-20 0.054 @ V_GS = -2.5V
0.072 @ V_GS = -1.8V
I_D (A)
-5.6
-4.8
-4.0
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
VGS
TA=25^oC
TA=70^oC
I_D
-20
V
±8
-5.6
-4.5
A
I_DM
±20
I_S
-1.7
A
TA=25^oC
TA=70^oC
P_D
2.0
W
1.3
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Symbol Maximum Units
R_{T HJA}
62.5
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM3445_B