AM3405P Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET

Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature TSOP-6 Surface Mount Package
Saves Board Space
• High power and current handling capability
AM3405P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
56 @ V_GS = -4.5V
-20
80 @ V_GS = -2.5V
150 @ V_GS = -1.8V
I_D (A)
-4.9
-4.2
-3.1
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
V_GS
±12
T_A=25^oC
T_A=70^oC
I_D
-4.9
-4.0
I_DM
±20
I_S
-1.7
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
2.0
1.3
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Symbol
R_θJA
Maximum
62.5
110
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
March, 2004 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM3405_E