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AM30N10-70D Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 100-V (D-S) MOSFET | |||
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Analog Power
N-Channel 100-V (D-S) MOSFET
Key Features:
⢠Low rDS(on) trench technology
⢠Low thermal impedance
⢠Fast switching speed
Typical Applications:
⢠PoE Power Sourcing Equipment
⢠PoE Powered Devices
⢠Telecom DC/DC converters
⢠White LED boost converters
AM30N10-70D
VDS (V)
100
PRODUCT SUMMARY
rDS(on) (mâ¦)
78 @ VGS = 10V
92 @ VGS = 4.5V
ID(A)
21
19
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current
TC=25°C
ID
21
Pulsed Drain Current b
IDM
100
Continuous Source Current (Diode Conduction)
IS
30
Power Dissipation
TC=25°C
PD
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
50
3
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM30N10-70D_revC
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