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AM290N10-02FP Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 100-V (D-S) MOSFET
Analog Power
N-Channel 100-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Hot Swap Inrush Limit Circuits
• Uninterruptible Power Supplies and
Inverters
• Motor Speed Controls
AM290N10-02FP
VDS (V)
100
PRODUCT SUMMARY
rDS(on) (mΩ)
4.6 @ VGS = 10V
6.6 @ VGS = 6.5V
ID (A)
290a
TO-247
DRAIN
connected
to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
VGS
±20
TC=25°C
ID
200
IDM
500
IS
200
TC=25°C
PD
500
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
0.29
Units
°C/W
Notes
a. Silicon and thermal rating is 290A, package is rated at 200A continuous
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM290N10-02FP_1A