AM2361P Datasheet, PDF (1/3 Pages) Analog Power – P-Channel 60-V (D-S) MOSFET

Analog Power
P-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Extended VGS range (±25) for battery pack
applications
AM2361P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
-60 ^{0.155 @ VGS = -10V}
0.230 @ V_GS = -4.5V
I_D (A)
3.4
2.8
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
-60
V
±20
3.4
2.8
A
±15
Continuous Source Current (Diode Conduction)^a
I_S
-1.7
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
1.3
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol Maximum Units
R_{T HJA}
100
o_C/W
166
April, 2005 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM2361_A