AM2351P Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 200-V (D-S) MOSFET

Analog Power
P-Channel 200-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
AM2351P
VDS (V)
-200
PRODUCT SUMMARY
r_DS(on) (Ω)
2.5 @ V_GS = -10V
2.8 @ V_GS = -5.5V
ID(A)
-0.6
-0.5
SOT-23
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
-200
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
T_A=25°C
T_A=70°C
I_D
-0.6
-0.5
I_DM
5
I_S
1.2
Power Dissipation ^a
T_A=25°C
T_A=70°C
P_D
1.3
0.8
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol
R_θJA
Maximum
100
166
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM2351P_1A