AM2345PE Datasheet, PDF (1/3 Pages) Analog Power – P - Channel 40V (D-S) MOSFET

Analog Power
AM2345PE
P - Channel 40V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
-40 ^{0.164 @VGS= -10 V}
0.260 @ V_GS = -4.5V
SOT-23
Top View
I_D (A)
-3.2
-2.6
S
•
Low r_DS(on) provides higher efficiency and
G
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
S
• Fast switching speed
• High performance trench technology ESD Protected
2000V
G
D
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
-40
V
±20
± 3.2
± 2.7 ^A
±10
Continuous Source Current (Diode Conduction)^a
I_S
0.4
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
1.25
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_{T HJA}
Maximum Units
100
o_C/W
150
PRELIMINARY
1
Publication Order Number:
DS-AM2345PE_A