AM2345P Datasheet, PDF (1/3 Pages) Analog Power – P - Channel 40V (D-S) MOSFET

Analog Power
AM2345P
P - Channel 40V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (O)
-40 ^{0.164 @ VGS= -10 V}
0.260 @ V_GS = -4.5V
cellular and cordless telephones.
I_D (A)
-3.2
-2.6
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25^oC
TA=70^oC
ID
-40
V
±20
± 3.2
± 2.7 ^A
I_DM
±10
I_S
0.4
A
T_A=25^oC
T_A=70^oC
PD
1.25
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_THJA
Maximum
100
150
Units
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM2345_A