AM2341P Datasheet, PDF (1/3 Pages) Analog Power – P - Channel 40V (D-S) MOSFET

Analog Power
AM2341P
P - Channel 40V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r_DS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are lower voltage
application, power management in
portable and battery-powered products
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
-40 ^{0.082 @ VGS = -10 V}
0.130 @ V_GS = -4.5V
such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
•
Low r_DS(on) Provides Higher Efficiency and
G
Extends Battery Life
• Fast Switch
• Low Gate Charge
S
• Miniature SOT-23 Surface Mount Package
Saves Board Space
I_D (A)
-3.2
-2.6
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
-40
V
±20
± 3.2
± 2.7 ^A
±10
Continuous Source Current (Diode Conduction)^a
I_S
0.4
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
1.25
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_{T HJA}
Maximum Units
100
o_C/W
150
August, 2005 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM2341_A