AM2325P Datasheet, PDF (1/6 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET

Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
AM2325P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
0.055 @ V_GS = -4.5V
-20 0.089 @ V_GS = -2.5V
0.20 @ V_GS = -1.8V
I_D (A)
-3.6
-2.8
-1.8
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
I_S
-20
±12
-3.6
-2.9
-10
±0.46
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
1.25
0.8
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R_THJA
Maximum
100
166
Units
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM2325_J