AM2313P Datasheet, PDF (1/5 Pages) Analog Power – P - Channel Logic Level MOSFET

Analog Power
AM2313P
P - Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r_DS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are voltage control
small signal switch, power management in
portable and battery-powered products and
most low current high side switch.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Fast Switch
• Low Gate Charge
• High Saturation Current
• Miniature SOT-23 Surface Mount Package
Saves Board Space
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
-60
10 @ V_GS = -10 V
20 @ V_GS = -4.5V
G
S
I_D (A)
-0.2
-0.12
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
-60
V
±20
±0.12
±0.09 ^A
±1
Continuous Source Current (Diode Conduction)^a
I_S
0.24
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
0.36
W
0.29
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_{T HJA}
Maximum Units
350
o_C/W
400
July, 2002 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM2313_B