AM2309P Datasheet, PDF (1/2 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET

Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, cellular and cordless telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
AM2309P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
-20 ^{0.026 @ VGS = -4.5V}
0.035 @ V_GS = -2.5V
I_D (A)
-5.7
-4.9
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Power Dissipation^a
Operating Junction and Storage Temperature Range
VDS
V_GS
T_A=25^oC
T_A=70^oC
I_D
-20
V
±8
-5.7
-4.7
A
I_DM
-10
T_A=25^oC
T_A=70^oC
P_D
1.25
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R_THJA
Maximum
100
150
Units
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2309P_A