AM2302NE Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 20-V (D-S) MOSFET

Analog Power
AM2302NE
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
20
0.076 @ V_GS = 4.5V
0.103 @ V_GS = 2.5V
I_D (A)
3.4
2.9
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
ESD
Protected
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25^oC
TA=70^oC
ID
20
V
±8
3.4
2.2
A
IDM
10
IS
1.6
A
TA=25^oC
TA=70^oC
PD
1.25
W
0.8
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol Maximum Units
R_THJA
100
166
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2302NE_A