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AM1925PE Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET
Analog Power
P-Channel 20-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
AM1925PE
VDS (V)
-20
PRODUCT SUMMARY
rDS(on) (mΩ)
160 @ VGS = -4.5V
210 @ VGS = -2.5V
ID(A)
-1.2
-1.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
IDM
IS
-1.2
-1
-3
-0.43
Power Dissipation a
TA=25°C
TA=70°C
PD
0.34
0.22
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
375
430
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM1925PE_1A