AM1922NE Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 20-V (D-S) MOSFET

Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe S1
SC70-6 saves board space
G1
• Fast switching speed
D2
• High performance trench technology
AM1922NE
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (mΩ)
20
88 @ V_GS = 4.5V
120 @ V_GS = 2.5V
I_D (A)
1.6
1.3
SC70-6
Top View
16
25
34
D₁
D₂
G₁
D1
G2
S2
S₁
N-Channel MOSFET
G₂
S₂
N-Channel MOSFET
ESD Protected
2000V
ABSOLUTEMAXIMUM RATINGS (TA = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
8
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
I_D
1.6
1.3
A
Pulsed Drain Current^b
IDM
5
Continuous Source Current (Diode Conduction)^a
I_S
0.4
A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
PD
0.3
W
0.21
Operating Junction and Storage Temperature Range T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
R_THJA
415
o_C/W
460
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM1922NE_A