AM1535CE Datasheet, PDF (1/3 Pages) Analog Power – Low rDS(on) provides higher efficiency and extends battery life

Analog Power
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SC70-6 saves board space
• Fast switching speed
• High performance trench technology
AM1535CE
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.09 @ VGS = 4.5V
0.18 @ VGS = 2.5V
-30
0.21 @ VGS = -4.5V
0.29 @ VGS = -2.5V
I_D (A)
1.5
1.1
-1.0
-0.9
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
-30
V
VGS
8
-8
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
ID
1.5
1
1.3
0.8
A
Pulsed Drain Current^b
I_DM
0.7
-1.2
Continuous Source Current (Diode Conduction)^a
I_S
0.25
-0.25 ^A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
0.3
0.3
W
0.21
0.21
Operating Junction and Storage Temperature Range T_J, T_stg
-55 to 150
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R_THJA
Maximum
415
460
Units
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM1535CE_A