AM1433PE Datasheet, PDF (1/2 Pages) Analog Power – P-Channel 30-V (D-S) MOSFET

Analog Power
AM1433PE
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe D
SC70-6 saves board space
D
•
•
Fast switching speed
High performance trench technology _ESD
G
Protected
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
-30 ^{0.064 @ VGS = -10V}
0.096 @ V_GS = -4.5V
I_D (A)
-4.1
-3.3
SC70-6
Top View
16
25
34
S
G
D
D
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25^oC
TA=70^oC
ID
-30
V
±20
-4.1
-3.3
A
IDM
-10
I_S
±1.4
A
TA=25^oC
TA=70^oC
P_D
1.56
W
0.81
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R_THJA
Maximum Units
80
o_C/W
125
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM1433PE_A