AM1331P Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 30-V (D-S) MOSFET

Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SC70-3 saves board space
• Fast switching speed
• High performance trench technology
AM1331P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
-30 ^{0.112 @VGS= -10V}
0.172 @ V_GS = -4.5V
I_D (A)
-1.5
-1.2
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25^oC
TA=70^oC
ID
-30
V
±20
-1.5
-1.2
A
IDM
-2.5
I_S
±0.28 ^A
TA=25^oC
TA=70^oC
PD
0.34
W
0.22
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R_THJA
Maximum Units
375
o_C/W
430
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM1331_B