AM12N65PCFM Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 650-V (D-S) MOSFET

Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Power Supplies
• Motor Drives
• Consumer Electronics
AM12N65PCFM
VDS (V)
650
PRODUCT SUMMARY
r_DS(on) (mΩ)
800 @ V_GS = 10V
850 @ V_GS = 6V
ID (A)
7
6.5
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
650
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
V_GS
±20
T_C=25°C
I_D
7
I_DM
30
I_S
7
T_C=25°C
P_D
60
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^c
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R_θJA
R_θJC
Maximum
62.5
2.5
Units
°C/W
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1
Publication Order Number:
DS_AM12N65PCFM_1A