AM110P06-06B Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 60-V (D-S) MOSFET

Analog Power
P-Channel 60-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
AM110P06-06B
VDS (V)
-60
PRODUCT SUMMARY
r_DS(on) (mΩ)
6 @ V_GS = -10V
7 @ V_GS = -4.5V
ID(A)
-90
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
-60
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
V_GS
T_A=25°C
I_D
I_DM
I_S
T_A=25°C
P_D
±20
-90
-390
-110
300
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R_θJA
R_θJC
Maximum
62.5
0.5
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM110P06-06B_1A