AM10N30-600I Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 300-V (D-S) MOSFET

Analog Power
N-Channel 300-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DPAK saves board space
• Fast switching speed
• High performance trench technology
AM10N30-600I
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (mΩ)
300
600 @ V_GS = 10V
900 @ V_GS = 5.5V
I_D (A)
7.5
6.1
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
VGS
TC=25^oC ^ID
IDM
300
V
±20
7.5
A
36
I_S
5
A
TC=25^oC ^PD
50
W
TJ, Tstg -55 to 175 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_θJA
Maximum Junction-to-Case
R_θJC
Maximum
50
3.0
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM10N30-600_A